72421a datasheet 2n3904
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NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted * The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low current and power, medium voltage, and can operate at moderately high speeds.
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2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 October 2014 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3904BU 2N3904 TO-92 3L Bulk 10000 2N3904TA 2N3904 TO-92 3L Ammo 2000 2N3904TAR 2N3904 TO-92 3L Ammo 2000 2N3904TF 2N3904 TO-92 3L Tape and Reel 2000 IRF530 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF530 MOSFET.
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2n3904s revision no : 4 c 0 collector current i (ma) collector current i (ma) 0 c 0 base-emitter voltage v (v)be i - vc be 10 dc current gain h fe 0.1 0.3 1 3 collector current i (ma)c 0 collector-emitter voltage v (v)ce i - vc ce h - i collector current i (ma)c collector-emitter saturation ce(sat) v - i 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 2N3904 from DIODES Incorporated. Find the PDF Datasheet, Specifications and Distributor Information.
a d v a n c e d s e m i c o n d u c t o r, i n c. rev.b 7525 ethel avenue • north hollywood, ca 91605 • (818) 982-1202 • fax (818) 765-3004 1/1 S8550 Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 625mW, Vceo : 25V, ic : 500mA Features. TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation.
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low current and power, medium voltage, and can operate at moderately high speeds. 2N3705 Bipolar Transistors Page 3 09/05/08 V1.1 Specifications VCEO (V) VCBO Maximum (V) IC (mA) hFE Minimum at IC = 50mA fT Minimum (MHz) Ptot (mW) Pakage Part Number 30 50 0.8 50 100 625 TO-92 2N3705 Pzt3904 pdf This device is designed as a general purpose. Last Update: Apr 2015 PDF SOT223-4L, PACKING DRAWING2N3904 MMBT3904 PZT3904 Rev. pzt3904 spice model Stresses exceeding the absolute maximum ratings may damage the device.PZT3904 datasheet, PZT3904 pdf, PZT3904 data sheet, datasheet,